2016功率半導體材料（氮化鎵＆碳化矽）應用元件國際論壇
2016 Symposium on High Power Semiconductor Materials (GaN & SiC) and Devices
邀 請 函
Invitation
次世代電力電子製造技術為全球製造業創新研究發展重點之一，矽基元件是過去幾十年來世界經濟發展的重要推手，但由於矽(Si)已接近其理論上的性能極限，寬能隙(Wide Bandgap; WBG)半導體材料與電力電子元件日趨重要，將成為次世代功率產品及應用重要的技術平台。
我國投入寬能隙高功率材料與模組製程研究多年，建立與國際功率模組產業之技術交流平台實屬必要，本研討會特邀請國內外功率半導體產學機構，包括Infineon Technologies、Transphorm Inc、STMicroelectronics、台達電子、全鑫材料、漢磊科技及交通大學專家進行專題演講，與國內各界分享交流，在此，誠摯邀請您撥冗參加此盛會，並藉此機會與國內相關產業先進作技術及經驗交流，期能促成上下游廠商的合作結盟，紮根台灣，跨足國際！
The power electronics semiconductor manufacturing technology of next generation has been the global manufacturing innovation researching and developing emphasis. Si-based components are important for global economic development in last few decades. However, the performance of Si is almost approaching its limit; meanwhile, Wide Bandgap semiconductor components and power electronics components become more important, and will be the significant technology platform for power products and applications of next generation.
Taiwan has been engaging in the development of semiconductor industry for years, founding a platform that provides technical information exchange and collaboration for international communities is important and necessary. We are honored to invite domestic and foreign experts in the industry and academia of power semiconductor, including Infineon Technologies, Transphorm Inc, STMicroelectronics, DELTA, AG materials Inc., EPISIL technology Inc. and NCTU to deliver lectures and share information.
Sincerely invite you to participate this symposium, we aim to provide a platform where experiences exchanges and facilitate the collaboration among supply chain manufacturers. This symposium is expected to be a momentum for high power semiconductor materials and modules technology development in Taiwan, and international.
- 論壇時間Symposium time：
- 年10月13日 上午8:30至下午5:00 (Oct.13rd.2016，8:30am～5:00pm)
- 活動報名時間Registration time：
- 2016年9月30日下午五點止(額滿為止) (From now until Sep.30th .2016 5:00pm, until Full)
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Thursday, October 13, 2016
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8:30-9:00
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Registration
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9:00-9:10
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Opening Remarks
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9:10-9:50
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The impact of GaN and SiC on the density and performance of power electronics
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Infineon Technologies
Dr. Eric Persson
Head of GaN Applications
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9:50-10:30
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SiC MOSFET design for high power application
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Delta Electronics, Inc.
Dr. Herman Chang
General Manager
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10:30-10:50
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Coffee Break
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10:50-11:30
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Materials Design Aspects for Power Electronic System
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AG materials Inc.
Dr. Mannfu Rau
President
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11:30-12:00
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Panel Discussion
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12:00-13:20
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Lunch
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13:20-14:00
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GaN MISHEMT for Power Switching Applications : Materials and Process Aspects
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National Chiao Tung University
Dr. Edward Y. Chang
Vice president
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14:00-14:40
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Today and the Future of GaN HEMTs for Power Conversion
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Transphorm Inc.
Dr. Primit Parikh
Cofounder & President
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14:40-15:00
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Coffee Break
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15:00-15:40
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Commercialization of SiC power device production line
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Episil Holding Inc.
Dr. Ian Chan
CEO
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15:40-16:20
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lectures
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STMicroelectronics
Dr. Giuseppe Izzo
General Manager and Regional Vice President
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16:20-17:00
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Panel Discussion
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18:00-20:00
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Banquet
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Friday, October 14, 2016
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9:30-11:30
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Expert forum (Closed meeting)
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11:30-13:00
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Lunch
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- 線上報名網址Registration website： http://ppt.cc/B7H2K
- 論壇地點Symposium venue：R301 (NTUH International Convention Center, Taipei, Taiwan R301)2號 (No.2, Xuzhou Rd., Zhongzheng Dist., Taipei City 10055, Taiwan, R.O.C.)
- 主辦單位Organized by：National Chung-Shan Institute of Science & Technology、Taiwan Institute of Economic Research
- 會議連絡人Contact：
- Taiwan Institute of Economic Research
- Shain Lee phone: +886-2-2586-5000 ext. 941 e-mail: d32955@tier.org.tw
- ：10461台北市德惠街16-8號7樓 (7F., No. 16-8, Dehuei St., Jhongshan District, Taipei City 10461, Taiwan)