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::: 可授權專利

Method of testing radiation for a SDRAM

創作型式：
專利證號：
US6642725B2
發明人：
Juhn, Li Shen | Wu, Kuang Shyr | Lin, Maw Ching
國別：
美國
獲證日期：
2003-11-04
專利摘要：
A method for testing for radiation on a synchronized dynamic random access memory (SDRAM), wherein an irradiation controller irradiates the SDRAM. The status of the SDRAM after a radiation test are calculated. The radiation tests comprise SEU, micro latch-up, SEL and get rapture tests. From the radiation test, we can understand the condition of the SDRAM before and after the radiation test.
IPC國際分類號：
G01R003100 | G01R003128 | G11C000500 | G11C002940 | G11C002950