專利摘要：
An InAs/GaAs quantum dot light emitting diode and a method of fabricating the same are disclosed. The InAs/GaAs quantum dot light emitting diode which is formed by turning off an As shutter and using As background concentration for epitaxy, comprises a Si-doped GaAs substrate, a N-type structure, an undoped quantum well, aseries of quantum dot layers, spacer layers, a barrier layer and a P-type structure.