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::: 可授權專利

NITRIDE BASED SEMICONDUCTOR LASER DIODE DEVICE WITH A BAR MASK

創作型式:
發明
專利證號:
US7233610B2
發明人:
林科均、程亞桐、彭開峰、林家慶、項裕德、藍文厚
國別:
美國
獲證日期:
2007/06/19
專利摘要:
Methods for producing dendrons of different generations with hydrophobic functional end-groups, and for producing polyurethanes with the side-chain dendrons are disclosed step-by-step. The dendron with hydrophobic functional end-groups in the polyurethane systems, and the honeycomb-like structure thin films are obtained by a breath-figure process. The structures of dendrons and dendritic side-chain polyurethanes are respectively expressed in the following and the end-groups (R) of the dendron are long alkyl chains or perfluoroalkyl derivatives.
IPC國際分類號:
C07C027106