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::: 可授權專利

一種均勻碳化矽晶體製備裝置

創作型式：
發明
專利證號：
US11072871B2
發明人：
郭志偉、馬代良、戴嘉宏、虞邦英、柯政榮、林柏丞、陳學儀
國別：
美國
獲證日期：
2021/07/27
專利摘要：
A preparation apparatus for uniform silicon carbide crystals comprises a circular cylinder, a doping tablet, and a plate to stabilize and control the supply of dopants. The accessory does not participate in the reaction in the growth chamber but maintains its efficacy during growth. Finally, a single semi-insulating silicon carbide crystal with uniform electrical characteristics can be obtained.
IPC國際分類號：
C23C001406