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專利名稱 改良式平方根解調裝置及其方法
創作型式 發明
專利證號 US7379957B2
國別 美國
獲證日期 2008/05/27
專利摘要 A nitride based semiconductor laser diode device comprising a selective growth mask with a grating structure is proposed. The island-like stacked epitaxial layers including the P-type cladding layer is formed from the selective growth mask upon the active layer of the semiconductor laser structure. This proposed structure can reduce the strain by the deformation due to the isolate structure. Thus, increase of thickness of the cladding layer and/or increase of composition difference can be achieved without crack existing in the island-like stacked epitaxial layers. The optical confinement can be effectively improved.

IPC國際分類號

H01S000318
聯絡人 王淳右
電話 #329566
EMAIL f437frank@ncsist.org.tw