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專利名稱 NITRIDE BASED SEMICONDUCTOR LASER DIODE DEVICE WITH A BAR MASK
創作型式 發明
專利證號 US7233610B2
國別 美國
獲證日期 2007/06/19
專利摘要 Methods for producing dendrons of different generations with hydrophobic functional end-groups, and for producing polyurethanes with the side-chain dendrons are disclosed step-by-step. The dendron with hydrophobic functional end-groups in the polyurethane systems, and the honeycomb-like structure thin films are obtained by a breath-figure process. The structures of dendrons and dendritic side-chain polyurethanes are respectively expressed in the following and the end-groups (R) of the dendron are long alkyl chains or perfluoroalkyl derivatives.

IPC國際分類號

C07C027106
聯絡人 王淳右
電話 #329566
EMAIL f437frank@ncsist.org.tw