::: 產業服務
*

::: 技術移轉

專利名稱 一種在多晶氮化鋁基板作高深寬比圖案的方法
創作型式 發明
專利證號 US9814143B1
國別 美國
獲證日期 2017/11/07
專利摘要 A method of forming a pattern with high aspect ratio on a polycrystalline aluminum nitride substrate comprises the steps of (A) providing an aluminum nitride substrate and forming a barrier layer on the aluminum nitride substrate; (B) etching the barrier layer with an energy beam to form at least one recess in the barrier layer; (C) plasma etching the substrate to deepen the recess into the aluminum nitride substrate; (D) removing the barrier layer to obtain the aluminum nitride substrate having at least one pattern with high aspect ratio. The method uses the energy beam to directly form a pattern on the barrier layer, and further employs plasma etching to prepare the aluminum nitride substrate having a pattern with high aspect ratio quickly and effectively.

IPC國際分類號

H01L002100
聯絡人 王淳右
電話 #329566
EMAIL f437frank@ncsist.org.tw