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專利名稱 一種均勻碳化矽晶體製備裝置
創作型式 發明
專利證號 US11072871B2
國別 美國
獲證日期 2021/07/27
專利摘要 A preparation apparatus for uniform silicon carbide crystals comprises a circular cylinder, a doping tablet, and a plate to stabilize and control the supply of dopants. The accessory does not participate in the reaction in the growth chamber but maintains its efficacy during growth. Finally, a single semi-insulating silicon carbide crystal with uniform electrical characteristics can be obtained.

IPC國際分類號

C23C001406
聯絡人 王淳右
電話 #329566
EMAIL f437frank@ncsist.org.tw