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專利名稱 一種於碳化矽基板上製作高品質超薄石墨膜之方法
創作型式 發明
專利證號 US11049717B2
國別 美國
獲證日期 2021/06/29
專利摘要 A method for fabricating an ultra-thin graphite film on a silicon carbide substrate includes the steps of: (A) providing a polyamic acid solution and a siloxane-containing coupling agent for polymerizing under an inert gas atmosphere to form a siloxane-coupling-group-containing polyamic acid solution; (B) performing a curing process after applying the siloxane-coupling-group-containing polyamic acid solution to a silicon carbide substrate; (C) placing the silicon carbide substrate in a graphite crucible before placing the graphite crucible in a reaction furnace to perform a carbonization process under an inert gas atmosphere; (D) subjecting the silicon carbide substrate to a graphitization process to obtain a graphite film, thereby make it possible to fabricate an ultra-thin graphite film of high-quality on the surface of silicon carbide in a lower graphitization temperature range.

IPC國際分類號

C30B000102
聯絡人 王淳右
電話 #329566
EMAIL f437frank@ncsist.org.tw