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專利名稱 Method for reduction of interfacial stress accumulation between double side copper-plated layers and aluminum nitride substrate(一種降低雙面銅鍍層與氮化鋁基板之界面應力累積的方法)
創作型式 發明
專利證號 US10923621B2
國別 美國
獲證日期 2021/02/16
專利摘要 The present invention uses a photolithography process and an electroplating process to perform. TAV copper filling and patterning of the fabrication of the double side copper-plated layers to plate the double side copper-plated layers in advance at the TAV through holes to serve as a stress buffer layer of the aluminum nitride substrates. Then the subsequent pattern designs of the copper-plated layers are customized. According to the simulation theory calculations, it is proved that the stress which accumulates on the short-side of the copper-plated layer of the aluminum nitride substrate with the asymmetric structure may be effectively reduced to facilitate the improvement of the reliability of the aluminum nitride substrate.

IPC國際分類號

C04B0035581
聯絡人 王淳右
電話 #329566
EMAIL f437frank@ncsist.org.tw