專利摘要：
The present invention adopts an aluminum nitride substrate with great heat dissipation, great thermal conductivity, high electrical insulation, long service life, corrosion resistance, high temperature resistance, and stable physical characteristics. A high-quality zinc oxide film with a wide energy gap is fabricated on the aluminum nitride substrate by magnetron radio frequency (RF) sputtering. Compared with general vapor deposition, chemical vapor deposition and hydrothermal, the magnetron RF sputtering grows the high-quality zinc oxide film with few defects. The zinc oxide film with few defects concentration is an important key technology for short-wavelength optoelectronic devices, which decrease leakage currents of the optoelectronic devices, reduces flicker noise, and further improves its UV-visible rejection ratio.