|
|
論文
【年度】98
年研發成果
【項目】
論文
【領域】
關鍵技術科專
【類別】
電資通光
| 計畫名稱 | 光電感測辨識模組與應用技術計畫 | | 論文名稱 | The growth of InN on GaN templates at different pressures by MOCVD | | 論文類型 | 研討會 | | 發表處 | NTUT,Taipei,Taiwan | | 發表人 | J. C. Lin1, K. J. Chang1, Y. C. Cheng1, S. J. Chang2, C. C. Huang2, C. H. Lan2, and H. C. Lee2 | | 發表日期 | 98/12/14 | | 國家 | 國內 | | 內容摘要 | Over the past several years, indium nitride (InN) has become attractive. It has been shown that the InN exhibits narrow direct band gap of around 0.7 eV. This new discovery has generated a large interest in potential applications for some very practical optoelectronic devices. However, to grow high quality InN epitaxial layers by metalorganic chemical vapor deposition (MOCVD) is more difficult. It is known that one need to grow InN epitaxial layers at relatively low growth temperatures so as to prevent InN from dissociation. By increasing the growth pressure, we might be able to prevent InN from dissociation even at low growth temperatures. In this paper, we report a detailed systematic study on the growth of InN by MOCVD at various growth pressures. |
|