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論文
【年度】98
年研發成果
【項目】
論文
【領域】
關鍵技術科專
【類別】
電資通光
| 計畫名稱 | 光電感測辨識模組與應用技術計畫 | | 論文名稱 | Optoelectronic Characteristics of In(Ga)As Quantum-Dot Multilayers Grown By Metal Organic Chemical Vapor Deposition | | 論文類型 | 研討會 | | 發表處 | NTUT,Taipei,Taiwan | | 發表人 | Shiang-Feng Tang1*, Hsing-Yuan Tu2, Tzu-Chiang Chen3, Li-Chun Wang1, Shih-Yen Lin4 and Cheng-Der Chiang1 | | 發表日期 | 98/12/14 | | 國家 | 國內 | | 內容摘要 | In this paper, based on the high uniformity of quantum dot (QD) growth and high performance of interfaces between quantum dot matrix, the epitaxial method is dominated with molecular beam epitaxy (MBE) in the recent decades. Compared with it, using metal organic chemical vapor deposition (MOCVD) for quantum dot based optoelectronic device is suited for high throughput. In this paper, the samples are prepared by MOCVD incorporated with standard process of compound semiconductor to achieve In0.1Ga0.9As/InAs/In0.1Ga0.9As quantum dot infrared photodetector (QDIP). |
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