|
|
論文
【年度】99
年研發成果
【項目】
論文
【領域】
關鍵技術科專
【類別】
機電運輸
| 計畫名稱 | 新世代能源關鍵技術開發計畫 | | 論文名稱 | A Study on crystallizing effect of annealing for InN film | | 論文類型 | 研討會 | | 發表處 | 2010 International Conference on Advanced Manufacture | | 發表人 | 李大青 | | 發表日期 | 99/02/01 | | 國家 | 國內 | | 內容摘要 | Indium nitride (InN) epi-films were grown on the low temperature InN as buffer layers which were annealed in different temperatures by low pressure Metal organic chemical vapor deposition (MOCVD). Poly-crystalline InN epi-films were obtained because of the high temperature. The structural and electrical properties were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), and Hall measurement. From the Hall mobility and SEM picture, it can be found that the highest mobility of InN in this experiment was appeared at the annealing temperature of 650℃. Above 650℃, the effect of decomposed mechanism of InN is stronger than the one of ammonia crack. The amorphous buffer InN film begins to crystallize, that is, small InN grains are formed above 650℃. |
|