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論文
【年度】99
年研發成果
【項目】
論文
【領域】
關鍵技術科專
【類別】
機電運輸
| 計畫名稱 | 新世代能源關鍵技術開發計畫 | | 論文名稱 | Discussion on electrical characteristics of i-In0.13Ga0.87N p-i-n photovoltaics by using a single/multi-antireflection layer | | 論文類型 | SCI期刊 | | 發表處 | Solar Energy Materials & Solar Cells (2010) | | 發表人 | Han Cheng Lee, Yan Kuin Su, Wen kuei Chuang, Jia Ching Lin, Kuo Chin Huang, Yi Cheng Cheng, Kuo Jen Chang | | 發表日期 | 99/02/01 | | 國家 | 國外 | | 內容摘要 | "Active layers of i-In0.13Ga0.87N p-i-n photovoltaics (PVs) with a single antireflection layer (SARL) and a multi-antireflection layer (MARL), respectively, were fabricated. Reflectance simulation results show that the PVs with a SARL or a MARL have performance superior to those without an antireflection layer (ARL). In particular, the surface reflectance of PVs with a MARL was reduced to 6% at wavelengths between 330 and 500 nm. The ARL reduced the reflectance and recombination current, as well as boosting shunt resistance without increasing series resistance. Compared with PVs without an ARL, the open-circuit voltage and fill factor of PVs with a MARL increased by 100% and 54.5%, respectively. The ideal factor was improved by 19.4% and 31.9% in devices with a SARL (SiO2) and a MARL (Ta2O5/SiO2), respectively." |
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