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論文
【年度】99
年研發成果
【項目】
論文
【領域】
關鍵技術科專
【類別】
機電運輸
| 計畫名稱 | 新世代能源關鍵技術開發計畫 | | 論文名稱 | Preparation and characterization Cu(In,Ga)2 films without selenization by co-sputtering from Cu(In,Ga)Se2 quaternary and In2S3 targets | | 論文類型 | SCI期刊 | | 發表處 | Elsevier Editorial System™for Applied Surface Science Manuscript Draft | | 發表人 | 林義成 | | 發表日期 | 99/09/25 | | 國家 | 國外 | | 內容摘要 | We report a chalcoprite CIGS fims prepared by co-sputering a quaternary alloy target and In2S3 binary target with a one-stage annealing process without post-selenization. Compare to traditional the two-stage selenization/sulfrization process, there are not other secondary(CuS, Cu(Se,S))phases are present, regardless of the bulk or surface region of CIGS films. The optimal annealing process condition was investigated in our study. The experimental results showed that the chalcopyrite CIGS films prepared have an ideal stoichiometry (Cu:24.25at.%, In:19.57 at.%, Ga:6.82 at.%, Se:28.47 at.%, S:20.90 at.%) with Cu/(In+Ga)=0.92, Ga/(In+Ga)=0.26, and S/(Se+S)=0.42. The film exhibited p-type conductivity with a double graded band-gap structure. |
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