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論文
【年度】103
年研發成果
【項目】
論文
【領域】
關鍵技術科專
【類別】
機電運輸
| 計畫名稱 | CIGS太陽電池關鍵技術開發計畫 | | 論文名稱 | The effect of sputtering power on the Al-doped MgZnO thin film deposited by RF magnetron sputter | | 論文類型 | 研討會 | | 發表處 | IUMRS ICEM 2014 | | 發表人 | H.W.Yu | | 發表日期 | 2014/10/10 | | 國家 | 國外 | | 內容摘要 | We have investigated the characteristics of Al-doped MgZnO (MZO) thin films prepared by rf magnetron sputtering using a MgxZn(1-x)O:Al (x = 0.1) target. The sputtering power was varied from 75 to 275 W (at a fixed Ar pressure of 2.5 mTorr) in order to investigate the effects of sputtering power on the electrical properties, optical properties, and surface morphology. The XRD results showed that the intensity of (002) preferred orientation increased with the sputtering power. The Hall measurements showed that the resistivity decreased with increasing sputtering power. The lowest resistivity achieved was 4.3 Ω?cm at 225 W and the average transmittance in the visible range is over 90%. In addition, the microstructure observed with SEM showed that the smoothest and the best quality surface of deposited MZO was also obtained at 225 W. |
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