| 內容摘要 | In this study, Ti-doped indium tin oxide (ITO:Ti) thin films were fabricated using a DC-magnetron sputter-ing deposition method. The thin films were grown without introducing oxygen or heating the substrate,and no post-growth annealing was performed after fabrication. The thickness of the ITO:Ti thin films(350 nm) was controlled while increasing the sputtering power from 50 to 150 W. According to the results,the optimal optoelectronic properties were observed in ITO:Ti thin films grown at a sputtering power of100 W, yielding a reduced resistivity of 3.2 × 10−4 -cm and a mean high transmittance of 83% at wave-lengths ranging from 400 to 800 nm. The optimal ITO:Ti thin films were used to fabricate a Cu(In,Ga)Se2solar cell that exhibited a photoelectric conversion efficiency of 11.3%, a short-circuit current density of33.1 mA/cm2, an open-circuit voltage of 0.54 V, and a fill factor of 0.64 |