|
|
論文
【年度】104
年研發成果
【項目】
論文
【領域】
關鍵技術科專
【類別】
機電運輸
| 計畫名稱 | 大面積RTP硒/硫化製程技術暨設備自主開發計畫 | | 論文名稱 | 利用原子層沉積法製備ZnS及Zn(O, S)薄膜 | | 論文類型 | 期刊 | | 發表處 | International Thin Film Conference(TACT2015) | | 發表人 | 倪國裕,梁仕昌,吳政翰,李文傑 | | 發表日期 | 2015/05/21 | | 國家 | 國內 | | 內容摘要 | Depositing Zn(O, S) thin film as the Cd-free buffer layer is an important topic in CIGS
solar cells since it offer the potential enhancements for either low cost and good for
environment. As the alternative methods of thin film deposition, Atomic layer deposition
technique exhibits a good step-coverage, uniformity and accurate control of thickness. In this
study, we fabricated ZnS thin film by using diethyl Zinc((C2H5)2Zn, DEZ) and dimethyl
sulfide((CH3)2S, DMS) as precursor. We also fabricated Zn(O, S) thin film by depositing ZnS
and ZnO(using DEZ and H2O as precursor) alternately(Fig. 1). By changing the cycle number
of ZnS and ZnO, we can control the oxygen/sulfide composition in the Zn(O, S) thin film.
The properties of the films were measured by ellipsometry, SEM, XRD and XPS. |
|