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論文
【年度】100
年研發成果
【項目】
論文
【領域】
關鍵技術科專
【類別】
機電運輸
| 計畫名稱 | 薄膜太陽能製程設備及模組關鍵技術研究發展三年計畫 | | 論文名稱 | 以電漿轟擊CIGS太陽電池前驅物-銅銦鎵薄膜之探討 | | 論文類型 | 研討會 | | 發表處 | 2011 American Vacuum Society (AVS)-International Plasma Workshop (IPW) | | 發表人 | 林威庭、陳昇暉、胡松城、林以中、盧永添、鄭襄君 | | 發表日期 | 100/04/01 | | 國家 | 國外 | | 內容摘要 | Cu-In-Ga (CIG) precursors were deposited on the soda-lime glasses by DC magnetron co-sputtering from Cu-Ga (23 at%) alloy and Indium targets. The stoichiometric ratio of Cu/(In+Ga) was 0.9 (In-rich) and the thickness of the film was 800 nm. After deposition of the precursor, the four crystallize phases of Indium, CuIn2, Cu11In9 and Cu3Ga were identified by XRD measurement. To prevent the formation of InxSey or other defects after selenization, the Indium has to be removed from the precursor. The precursors were bombarded in an argon plasma etching process which was used to modify the phase-transition, stoichiometric ratio and surface-morphology. Different crystalline properties of CIGS formed after the selenization process. The argon plasma power ranged from 100 W to 400 W. The working pressure was fixed at 2.3×10-4 torr and the etching time was 30 min. As the argon plasma bombardment power increased the precursors exhibited a single Cu11In9 crystalline phase and the stoichiometric rate of the Cu/(In+Ga) were increased (0.9 to 1.28). A Cu-rich surface formed due to the lower binding-energy of In-In (443.9eV) and the translation of Cu-rich inter-metallic phases from CuIn2 to Cu11In9 with the temperature based on the ion-beam energy. It was possible to fabricate CIG precursors with better phase-transition, stoichiometry and surface-morphology using the process parameters. When the argon plasma etching power was at 200 W a better crystalline property of CIGS was achieved after the selenization process. |
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