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論文
【年度】100
年研發成果
【項目】
論文
【領域】
關鍵技術科專
【類別】
機電運輸
| 計畫名稱 | 薄膜太陽能製程設備及模組關鍵技術研究發展三年計畫 | | 論文名稱 | Crystallization Phase Transition in the Precursors of CIGS-based Solar Cells | | 論文類型 | 研討會 | | 發表處 | TACT 2011 International Thin Films Conference | | 發表人 | 林威廷、陳昇暉、胡松城、林以中、盧永添、 鄭襄君 | | 發表日期 | 100/12/18 | | 國家 | 國外 | | 內容摘要 | As the argon plasma bombardment power increased the precursors exhibited a single Cu11In9 crystalline phase and the stoichiometric rate of the Cu/(In+Ga) were increased (0.9 to 1.28). A Cu-rich surface formed due to the lower binding-energy of In-In (443.9eV) and the translation of Cu-rich inter-metallic phases from CuIn2 to Cu11In9 with the temperature based on the ion-beam energy. It was possible to fabricate CIG precursors with better phase-transition, stoichiometry and surface-morphology using the process parameters. When the argon plasma etching power was at 200 W a better crystalline property of CIGS was achieved after the selenization process. |
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